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 Transistor
2SA1512
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SC1788
4.00.2
3.00.2
Unit: mm
s Features
q q q q
Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converters. Allowing supply with the radial taping. Optimum for high-density mounting.
marking
+0.2 0.45-0.1
0.70.1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings -25 -20 -7 -1 - 0.5 300 150 -55 ~ +150
Unit V V V A A mW C C
1:Emitter 2:Collector 3:Base
1
2
3
1.27 1.27 2.540.15
EIAJ:SC-72 New S Type Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25C)
Symbol ICBO ICEO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = -25V, IE = 0 VCE = -20V, IB = 0 IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCE = -2V, IC = -0.5A*2 VCE = -2V, IC = -1A*2 IC = -500mA, IB = -50mA*2 IC = -500mA, IB = -50mA*2 150 15
*2
min
typ
max -100 -1
2.00.2
s Absolute Maximum Ratings
(Ta=25C)
15.60.5
Unit nA A V V V
-25 -20 -7 90 25 - 0.4 -1.2 220
V V MHz
VCB = -10V, IE = 50mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz
25
pF
Pulse measurement
*1h
FE1
Rank classification
Q 90 ~ 155 R 130 ~ 220
Rank hFE1
1
Transistor
PC -- Ta
500 -1.2 Ta=25C 450 IB=-10A -1.0
2SA1512
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
-100 -30 -10 -3 -1
VCE(sat) -- IC
IC/IB=10
Collector power dissipation PC (mW)
350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160
Collector current IC (mA)
400
- 0.8
-9A -8A -7A -6A -5A -4A -3A -2A -1A
- 0.6
- 0.4
- 0.3 - 0.1 - 0.03
Ta=75C 25C -25C
- 0.2
0 0 -1 -2 -3 -4 -5 -6
- 0.01 - 0.01 - 0.03 - 0.1 - 0.3
-1
-3
-10
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
-100
hFE -- IC
IC/IB=10 600 VCE=-2V 320
fT -- IE
VCB=-10V Ta=25C
Base to emitter saturation voltage VBE(sat) (V)
500
Transition frequency fT (MHz)
-1 -3 -10
-30 -10 -3 -1 Ta=-25C 75C 25C
Forward current transfer ratio hFE
280 240 200 160 120 80 40
400
300
Ta=75C 25C
- 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3
200
-25C
100
-1
-3
-10
0 - 0.01 - 0.03 - 0.1 - 0.3
0 0.1
0.3
1
3
10
30
100
Collector current IC (A)
Collector current IC (A)
Emitter current IE (mA)
Cob -- VCB
80
Collector output capacitance Cob (pF)
70 60 50 40 30 20 10 0 -1
IE=0 f=1MHz Ta=25C
-3
-10
-30
-100
Collector to base voltage VCB (V)
2


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